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參數(shù)資料
| 型號： | 934056120127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 934056120127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK95180-100A
Logic level FET
BUK96180-100A
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
1
Drain-source non-repetitive
I
D = 5.5 A; VDD ≤ 25 V;
-
1.5
mJ
unclamped inductive turn-off
V
GS = 5 V; RGS = 50 ; Tmb = 25 C
energy
!
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
1000
0.1
1
10
100
VSD/V
ID/A
DC
RDS(ON)=VSD/ID
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.001
0.01
0.1
1
10
1E-07
1E-05
1E-03
1E-01
1E+01
t/s
Zth/(K/W)
0
0.02
0.05
0.1
0.2
0.5
1 For maximum permissible repetive avalanche current see fig.18.
May 2000
3
Rev 1.100
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