參數(shù)資料
型號(hào): 934056120127
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: 11 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 68K
代理商: 934056120127
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK95180-100A
Logic level FET
BUK96180-100A
Fig.11. Gate threshold voltage.
V
GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.12. Sub-threshold drain current.
I
D = f(VGS); conditions: Tj = 25 C; VDS = VGS
Fig.13. Typical capacitances, C
iss, Coss, Crss.
C = f(V
DS); conditions: VGS = 0 V; f = 1 MHz
Fig.14. Typical turn-on gate-charge characteristics.
V
GS = f(QG); conditions: ID = 25 A; parameter VDS
Fig.15. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.16. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 75 A
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
1
2
3
4
5
02468
10
QG / nC
VGS / V
0
5
10
15
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSDS/V
IF/A
25
Tj/C= 150
0
0.5
1
1.5
2
2.5
3
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0
200
400
600
800
1000
1200
0.01
0.1
1
10
100
VDS/V
Ciss
Coss
Crss
Capacitance / pF
May 2000
5
Rev 1.100
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