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參數(shù)資料
| 型號(hào)： | 934056122135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大小： | 334K |
| 代理商： | 934056122135 |
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Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 11 September 2000
6 of 13
9397 750 07342
Philips Electronics N.V. 2000. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ac85
0
1
2
3
4
5
6
7
8
9
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
ID
(A)
Tj = 25C
2V
2.2V
2.4V
2.6V
2.8V
3V
VGS =5V
03ac87
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
3.5
4
VGS (V)
ID
(A)
VDS >ID XRDSon
Tj = 25C
150C
03ac86
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
01
234
5678
9
10
ID (A)
RDSon
()
Tj = 25C
2V 2.2V
2.4V
2.6V
2.8V
3V
VGS =5V
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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