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參數(shù)資料
| 型號(hào)： | 934056122135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3500 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 3 PIN |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 334K |
| 代理商： | 934056122135 |
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Philips Semiconductors
PHT4NQ10LT
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 11 September 2000
5 of 13
9397 750 07342
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS =0V
Tj =25 °C
100
130
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage
Tj =25 °C1
2V
Tj = 150 °C
0.6
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
125
A
Tj = 150 °C
4
250
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
200
250
m
Tj = 150 °C
575
m
Dynamic characteristics
gfs
forward transconductance
8.5
S
Qg(tot)
total gate charge
12.2
nC
Qgs
gate-source charge
1.1
nC
Qgd
gate-drain (Miller) charge
3.6
nC
Ciss
input capacitance
374
pF
Coss
output capacitance
45
pF
Crss
reverse transfer capacitance
24
pF
td(on)
turn-on delay time
VDD =50V; RD =15 ; VGS =5V; RG =6
4
ns
tr
turn-on rise time
10
ns
td(off)
turn-off delay time
52
ns
tf
turn-off fall time
21
ns
Source-drain diode
VSD
0.87
1.5
V
trr
reverse recovery time
IS = 3.5 A; dIS/dt = 100 A/s;
VGS =0V; VDS =30V
50
ns
Qr
recovered charge
100
nC
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