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參數資料
| 型號： | 934056283118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數： | 13/15頁 |
| 文件大?。?/td> | 315K |
| 代理商： | 934056283118 |
Philips Semiconductors
BUK9509-75A; BUK9609-75A
TrenchMOS logic level FET
Product specication
Rev. 02 — 06 November 2000
7 of 15
9397 750 07656
Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03nb38
0
20
40
60
80
100
120
140
0
2040
6080
100
ID (A)
gfs
(S)
03nb43
0
2000
4000
6000
8000
10000
12000
14000
16000
0.01
0.1
1
10
100
VDS(V)
C (pF)
Ciss
Coss
Crss
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