參數(shù)資料
型號(hào): 934056321127
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: 6 A, 550 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, FULL PACK-3
文件頁(yè)數(shù): 1/7頁(yè)
文件大小: 61K
代理商: 934056321127
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
GENERAL DESCRIPTION
Enhanced performance new generation,high voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1200
V
CBO
Collector-Base voltage (open emitter)
-
1200
V
CEO
Collector-emitter voltage (open base)
-
550
V
I
C
Collector current (DC)
-
6
A
I
CM
Collector current peak value
-
10
A
P
tot
Total power dissipation
T
hs
≤ 25 C
-
32
W
V
CEsat
Collector-emitter saturation voltage
I
C = 2 A; IB = 0.4 A
0.15
1.0
V
h
FEsat
DC current gain
I
C = 3 A; VCE = 5 V
15.5
-
t
f
Fall time
I
C = 2.5 A; IB1 = 0.5 A
170
300
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE = 0 V
-
1200
V
CEO
Collector to emitter voltage (open base)
-
550
V
CBO
Collector to base voltage (open emitter)
-
1200
V
I
C
Collector current (DC)
-
6
A
I
CM
Collector current peak value
-
10
A
I
B
Base current (DC)
-
3
A
I
BM
Base current peak value
-
5
A
P
tot
Total power dissipation
T
hs
≤ 25 C
-
32
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
3.95
K/W
R
th j-a
Junction to ambient
in free air
55
-
K/W
12 3
case
b
c
e
April 1999
1
Rev 1.000
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