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參數(shù)資料
| 型號： | 934056285118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 100 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大小： | 313K |
| 代理商： | 934056285118 |
Philips Semiconductors
BUK9560-100A; BUK9660-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 22 January 2001
5 of 15
9397 750 07771
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =15A;
Tj =25 °C
51
60
m
Tj = 175 °C
150
m
VGS = 4.5 V; ID =15A
67
m
VGS =10V; ID =15A
49
58
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
1440
1924
pF
Coss
output capacitance
155
186
pF
Crss
reverse transfer capacitance
100
138
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
20
ns
tr
rise time
124
ns
td(off)
turn-off delay time
68
ns
tf
fall time
67
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
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