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| 型號： | 934056285118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 26 A, 100 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 13/15頁 |
| 文件大?。?/td> | 313K |
| 代理商： | 934056285118 |
Philips Semiconductors
BUK9560-100A; BUK9660-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 22 January 2001
7 of 15
9397 750 07771
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03nc70
0
10
20
30
40
020
40
60
ID (A)
gfs
(S)
03nc75
0
500
1000
1500
2000
2500
3000
3500
0.01
0.1
1
10
100
VDS (V)
C (pF)
Ciss
Coss
Crss
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