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參數(shù)資料
| 型號： | 934056319118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | 15 A BUF OR INV BASED PRPHL DRVR, PSSO4 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 38K |
| 代理商： | 934056319118 |
Philips Semiconductors
Product specification
TOPFET high side switch
BUK217-50YT
SMD version
STATIC CHARACTERISTICS
Limits are at -40C
≤ T
mb ≤ 150C and typicals at Tmb = 25C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
V
BG
Battery to ground
I
G = 1 mA
50
55
65
V
BL
Battery to load
I
L = IG = 1 mA
50
55
65
V
-V
LG
Negative load to ground
I
L = 10 mA
18
23
28
V
-V
LG
Negative load voltage
1
I
L = 20 A; tp = 300 s20
25
30
V
Supply voltage
battery to ground
V
BG
Operating range
2
5.5
-
35
V
Currents
9 V
≤ V
BG ≤ 16 V
I
B
Quiescent current
3
V
LG = 0 V
-
20
A
T
mb = 25C
-
0.1
2
A
I
L
Off-state load current
4
V
BL = VBG
--
20
A
T
mb = 25C
-
0.1
1
A
I
G
Operating current
5
I
L = 0 A
-
2
4
mA
I
L
Nominal load current
6
V
BL = 0.5 V
T
mb = 85C
-
A
Resistances
V
BG
I
L
t
p
7
T
mb
R
ON
On-state resistance
9 to 35 V
5 A
300
s
25C
-
10
14
m
150C
-
25
m
R
ON
On-state resistance
6 V
5 A
300
s
25C
-
13
18
m
150C
-
33
m
R
G
Internal ground resistance
I
G = 10 mA
95
150
190
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. Because of current limiting, this parameter is not applicable.
7 The supply and input voltage for the R
ON tests are continuous.
The specified pulse duration t
p refers only to the applied load current.
September 2001
3
Rev 1.300
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