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參數(shù)資料
| 型號(hào)： | 934056321127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 550 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 934056321127 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11APX-1200
Fig.1. Test circuit for V
CEOsust.
Fig.2. Oscilloscope display for V
CEOsust.
Fig.3. Test circuit resistive load. V
IM = -6 to +8 V
V
CC = 250 V; tp = 20
s; δ = t
p / T = 0.01.
R
B and RL calculated from ICon and IBon requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
V
CC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
Fig.6. Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
IC
IB
10 %
90 %
ton
toff
ts
tf
IB1
-IB2
ICsat
tr
30ns
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
LB
IBon
-VBB
LC
T.U.T.
VCC
tp
T
VCC
R
T.U.T.
0
VIM
B
L
ICsat
90 %
10 %
tf
ts
IB1
IC
IB
t
- IB2
April 1999
3
Rev 1.000
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