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參數(shù)資料
| 型號(hào)： | 934056330215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 60K |
| 代理商： | 934056330215 |
2001 Jul 20
3
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5140T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
1A
ICM
peak collector current
2A
IBM
peak base current
1A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
Tamb ≤ 25 °C; note 2
450
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
417
K/W
in free air; note 2
278
K/W
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