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| 型號(hào)： | 934056330215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 60K |
| 代理商： | 934056330215 |
2001 Jul 20
5
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5140T
handbook, halfpage
0
1200
400
800
MLD452
101
1
10
IC (mA)
hFE
102
103
104
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
VCE = 5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
10
1
101
1
10
102
103
104
101
MLD453
IC (mA)
VBE
(V)
(1)
(3)
(2)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE = 5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
1
MLD454
1
10
102
IC (mA)
VCEsat
(mV)
103
104
(1)
(3)
(2)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MLD677
10
1
102
101
1
10
IC (mA)
RCEsat
(
)
102
103
104
101
(3)
(1)
(2)
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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