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參數(shù)資料
| 型號： | 934056334135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 103K |
| 代理商： | 934056334135 |
2001 Apr 25
2
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1204
FEATURES
Two low noise gain controlled amplifiers in a single
package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
DESCRIPTION
The BF1204 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor has a
SOT363 micro-miniature plastic package.
PINNING - SOT363
PIN
DESCRIPTION
1
gate 1 (a)
2
gate 2
3
gate 1 (b)
4
drain (b)
5
source
6
drain (a)
handbook, halfpage
MBL252
AMP
a
AMP
b
d (a)
s
d (b)
g1 (a)
Top view
g2
g1 (b)
13
2
4
5
6
Fig.1 Simplified outline and symbol.
Marking code: L3-
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the source lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET; unless otherwise specied
VDS
drain-source voltage
10
V
ID
drain current (DC)
30
mA
Ptot
total power dissipation
Ts ≤ 102 °C; note 1
200
mW
y
fs
forward transfer admittance
ID = 12 mA; f = 1 MHz
25
30
40
mS
Cig1-s
input capacitance at gate 1
ID = 12 mA; f = 1 MHz
1.7
2.2
pF
Crss
reverse transfer capacitance
f = 1 MHz
15
fF
NF
noise gure
f = 800 MHz
1.1
1.8
dB
Xmod
cross-modulation
input level for k = 1% at 40 dB AGC 100
105
dB
V
Tj
operating junction temperature
150
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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