參數(shù)資料
型號(hào)： 934056334135
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁(yè)數(shù)： 7/12頁(yè)
文件大?。?/td> 103K
代理商： 934056334135
2001 Apr 25
4
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1204
STATIC CHARACTERISTICS
Tj =25 °C; per MOS-FET; unless otherwise specied.
Note
1. RG1 connects gate 1 to VGG =5V.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 12 mA; per MOS-FET (1); unless otherwise specied.
Notes
1. For the MOS-FET not in use: VG1-S = 0; VDS =0.
2. Measured in Fig.19 test circuit.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage VG1-S =VG2-S = 0; ID =10 A10
V
V(BR)G1-SS gate-source breakdown voltage VGS =VDS = 0; IG1-S =10mA
6
10
V
V(BR)G2-SS gate-source breakdown voltage VGS =VDS = 0; IG2-S =10mA
6
10
V
V(F)S-G1
forward source-gate voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate-source threshold voltage
VDS =5V; VG2-S =4V; ID = 100 A
0.3
1
V
VG2-S(th)
gate-source threshold voltage
VDS =5V; VG1-S =4V; ID = 100 A
0.3
1.2
V
IDSX
drain-source current
VG2-S =4V; VDS =5V; RG = 120 k; note 1
8
16
mA
IG1-S
gate cut-off current
VG1-S =5V; VG2-S =VDS =0
50
nA
IG2-S
gate cut-off current
VG2-S =4V; VG1-S =VDS =0
20
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
Tj =25 °C
25
3040mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
1.7
2.2
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
3.3
pF
Coss
output capacitance
f = 1 MHz
0.85
pF
Crss
reverse transfer capacitance
f = 1 MHz
15
fF
Gtr
power gain
f = 200 MHz; GS = 2 mS; BS =BS(opt);
GL = 0.5 mS; BL =BL(opt); note 1
30
34
38
dB
f = 400 MHz; GS = 2 mS; BS =BS(opt);
GL = 1 mS; BL =BL(opt); note 1
26
30
34
dB
f = 800 MHz; GS = 3.3 mS; BS =BS(opt);
GL = 1 mS; BL =BL(opt); note 1
21
25
29
dB
NF
noise gure
f = 10.7 MHz; GS = 20 mS; BS =0
911
dB
f = 400 MHz; YS =YS(opt)
0.9
1.5
dB
f = 800 MHz; YS =YS(opt)
1.1
1.8
dB
Xmod
cross-modulation
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 2
90
dB
V
input level for k = 1% at 10 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 2
92
dB
V
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 2
100
105
dB
V
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