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參數(shù)資料
| 型號： | 934056343127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 18 A BUF OR INV BASED PRPHL DRVR, PZFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263B-01, 5 PIN |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 412K |
| 代理商： | 934056343127 |
Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET
Product data
Rev. 02 — 06 June 2002
5 of 16
9397 750 09384
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7.
Static characteristics
Table 6:
Static characteristics
Limits are valid for
40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Clamping voltage
VBG
battery-ground voltage
50
55
65
V
VBL
battery-load voltage
IL =IG = 1 mA
50
55
65
V
VLG
negative load-ground
18
23
28
V
VLG
negative load voltage
IL = 2 A; tp = 300 s
20
25
30
V
Supply voltage
VBG
operating range
battery-ground
5.5
-
35
V
Current
IB
quiescent current
Tmb = 150 °C
--20
A
Tmb =25 °C
-
0.1
2
A
IL
off-state load current
VBL =VBG
Tmb = 150 °C
--20
A
Tmb =25 °C
-
0.1
1
A
IG
operating current
-
24mA
IL(nom)
nominal load current (ISO)
VBL = 0.5 V; Tmb =85 °C
3.6
-
A
Resistance [4]
RBLon
on-state resistance
9
Tmb =25 °C
-
80
100
m
Tmb = 150 °C
-
200
m
VBG =6V; IL =2A
Tmb =25 °C
-
100
125
m
Tmb = 150 °C
-
250
m
RG
internal ground resistance
IG = 10 mA
95
150
190
Input [5]
II
input current
VIG = 5 V
20
90
160
A
VIG
input clamping voltage
II = 200 A
5.5
7
8.5
V
VIG(ON)
input turn-on threshold voltage
-
2.4
3
V
VIG(OFF)
input turn-off threshold voltage
1.5
2.1
-
V
VIG
input turn-on threshold hysteresis
-
0.3
-
V
II(ON)
input turn-on current
VIG =3V
-
100
A
II(OFF)
input turn-off current
VIG = 1.5 V
10
-
A
Low current detection [6][9]
IL(LC)
low current detection threshold
Tmb = 40 to +150 °C
90
-
600
mA
150
300
450
mA
IL(LC)
hysteresis
-
60
-
mA
Undervoltage [9]
VBG(UV)
low supply threshold voltage
2
4.2
5.5
V
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