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參數(shù)資料
| 型號(hào)： | 934056375135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SMD, LDMOST, 2 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | 934056375135 |
2002 Mar 05
5
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2043F
handbook, halfpage
Gp
(dB)
η
D
(%)
15
10
5
0
60
20
0
40
MGW645
08
412
16
PL (PEP) (W)
Gp
η
D
Fig.5
Power gain and efficiency as functions of
peak envelope load power, typical values.
VDS = 26 V; IDQ = 85 mA;
f1 = 2200 MHz; f2 = 2200.1 MHz.
handbook, halfpage
dim
(dBc)
08
412
d3
d5
d7
16
PL (PEP) (W)
0
20
60
80
40
MGW646
VDS = 26 V; IDQ = 85 mA; Th ≤ 25 °C;
f1 = 2200 MHz; f2 = 2200.1 MHz.
Fig.6
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
d3
(dBc)
08
412
16
PL (PEP) (W)
0
20
60
40
MGW647
(1)
(2)
(3)
Fig.7
Intermodulation distortion as a function of
peak envelope load power; typical values.
VDS = 26 V; Th ≤ 25 °C;
f1 = 2200 MHz; f2 = 2200.1 MHz.
(1) IDQ = 115 mA.
(2) IDQ = 55 mA.
(3) IDQ = 85 mA.
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