參數(shù)資料
型號: 934056383118
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 7000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁數(shù): 1/10頁
文件大小: 266K
代理商: 934056383118
Si9410DY
N-channel enhancement mode eld-effect transistor
Rev. 02 — 05 July 2001
Product data
c
M3D315
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
Si9410DY in SOT96-1 (SO8).
2.
Features
s Low on-state resistance
s Fast switching
s TrenchMOS technology.
3.
Applications
s DC to DC convertors
s DC motor control
s Lithium-ion battery applications
s Notebook PC
s Portable equipment applications.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT96-1, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
n/c
SOT96-1 (SO8)
2,3
source (s)
4
gate (g)
5,6,7,8
drain (d)
4
5
1
8
Top view
MBK187
s
d
g
MBB076
相關PDF資料
PDF描述
934056384118 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
934056385118 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
934056386118 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
934056396127 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934056399118 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
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