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參數資料
| 型號： | 934056396127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULLPACK-3 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 293K |
| 代理商： | 934056396127 |
PHX18NQ20T
N-channel enhancement mode eld-effect transistor
Rev. 01 — 28 August 2000
Product specication
c
M3D308
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
PHX18NQ20T in SOT186A.
2.
Features
s TrenchMOS technology
s Low on-state resistance
s Fast switching
s Low thermal resistance
s Isolated tab.
3.
Applications
s Off-line switched mode power supplies
s Television and computer monitor power supplies
s DC to DC converters
s Motor control circuits
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT186A, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
2
drain (d)
3
source (s)
Tab
isolated
123
isolated tab
03ab49
d
g
s
03ab30
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