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參數(shù)資料
| 型號： | 934056384118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 262K |
| 代理商： | 934056384118 |
Philips Semiconductors
Si9925DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 20 July 2001
5 of 13
9397 750 08415
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
gate-source threshold voltage
0.8
V
IDSS
drain-source leakage current
VDS =16V; VGS =0V; Tj =25 °C
1
A
VDS =10V; VGS =0V; Tj =70 °C
5
A
IGSS
gate-source leakage current
VGS = ±12 V; VDS =0V
100
nA
RDSon
drain-source on-state resistance
25
38
45
m
41
50
m
50
60
m
62
80
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID =10A
14
S
Qg(tot)
total gate charge
920
nC
Qgs
gate-source charge
2
nC
Qgd
gate-drain (Miller) charge
2.6
nC
td(on)
turn-on delay time
VDD =6V; RD =6 ; VGS =10V; RG =6
14
40
ns
tr
turn-on rise time
13
30
ns
td(off)
turn-off delay time
35
60
ns
tf
turn-off fall time
930
ns
Source-drain (reverse) diode
VSD
0.81
1.2
V
trr
reverse recovery time
IS = 5 A; dIS/dt = 100 A/s; VGS =0V
60
150
ns
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