參數(shù)資料
型號: 934056386118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 3.5 A, 20 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁數(shù): 9/13頁
文件大?。?/td> 244K
代理商: 934056386118
Philips Semiconductors
Si9956DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 16 July 2001
5 of 13
9397 750 08414
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
gate-source threshold voltage
ID = 250 A; VDS =VGS
1
V
IDSS
drain-source leakage current
VDS =16V; VGS =0V
Tj =25 °C
2
A
Tj =55 °C
25
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 2.2 A; Figure 7 and 8
55
100
m
VGS = 4.5 V; ID =1A; Figure 7 and 8
70
200
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID = 3.5 A
5.7
S
Qg(tot)
total gate charge
ID = 1.8 A; VDS =10V; VGS =10V; Figure 13
830
nC
Qgs
gate-source charge
0.8
nC
Qgd
gate-drain (Miller) charge
1.7
nC
td(on)
turn-on delay time
VDD =10V; RD =10 ; VGS =10V; RG =6
620
ns
tr
turn-on rise time
820
ns
td(off)
turn-off delay time
14
90
ns
tf
turn-off fall time
850
ns
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2.3A; VGS =0V; Figure 12
0.75
1.2
V
trr
reverse recovery time
IS = 1.7 A; dIS/dt = 100 A/s; VGS =0V
50
100
ns
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