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參數(shù)資料
| 型號： | 934056399118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 12/14頁 |
| 文件大?。?/td> | 300K |
| 代理商： | 934056399118 |
Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 18 September 2000
7 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 175 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
01
23
45
max
typ
min
V
GS
(V)
ID
(A)
03ac71
0
10
20
30
40
50
60
70
80
90
100
0
10203040
5060708090 100
ID (A)
(S)
g
fs
VDS > ID X RDSon
Tj = 25
o
C
175
o
C
03ac68
102
103
104
10-1
1
10
102
VDS (V)
Ciss, Coss,
Crss (pF)
Ciss
Coss
Crss
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