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| 型號(hào)： | 934056399118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大小： | 300K |
| 代理商： | 934056399118 |
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Philips Semiconductors
PSMN008-75P; PSMN008-75B
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 18 September 2000
3 of 14
9397 750 07495
Philips Electronics N.V. 2000. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tmb =25 °C; IDM is single pulse
Unclamped inductive load; VDD ≤ 15 V; RGS =50 ;
VGS = 10 V; starting Tj =25 °C and 150 °C.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
T
amb
(
o
C)
(%)
Ider
120
100
80
60
40
20
0
(%)
Tmb (oC)
03ad10
25
75
125
175
0
50
100
150
200
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ac65
10-1
1
10
102
103
1
10
102
103
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
1 ms
tp = 100 s
RDSon = VDS/ ID
tp
T
P
t
T
δ =
03ac93
1
10
102
103
10-2
10-1
1
10
I
AS
(A)
25
o
C
tp (ms)
T
j
prior to avalance = 150
o
C
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