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參數(shù)資料
| 型號(hào)： | 934056423112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 50K |
| 代理商： | 934056423112 |
2002 Mar 05
2
Philips Semiconductors
Product specication
200 MHz, 35 dB gain reverse amplier
BGR269
FEATURES
Excellent linearity
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
35 dB amplification up to 200 MHz.
APPLICATIONS
Reverse amplifier in two-way CATV systems operating
in the 5 to 200 MHz frequency range.
DESCRIPTION
High performance amplifier in a SOT115J package,
operating at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2
common
3
common
5+VB
7
common
8
common
9
output
Fig.1 Simplified outline.
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 5 MHz
34.5
35
35.5
dB
f = 200 MHz
35
36
dB
Itot
total current consumption (DC)
VB = 24 V
145
160
175
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
50
dBmV
Tmb
operating mounting base temperature
20
+100
°C
Tstg
storage temperature range
40
+100
°C
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