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參數(shù)資料
| 型號： | 934056423112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 5 MHz - 200 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934056423112 |
2002 Mar 05
3
Philips Semiconductors
Product specication
200 MHz, 35 dB gain reverse amplier
BGR269
CHARACTERISTICS
Bandwidth 5 to 200 MHz; VB = 24 V; Tmb =30 °C; ZS =ZL =75 .
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 5 MHz
34.5
35
35.5
dB
f = 200 MHz
35
36
dB
SL
slope straight line
f = 5 to 200 MHz
0
0.6
dB
FL
atness of frequency response f = 5 to 10 MHz
0.1
0.4
dB
f = 10 to 190 MHz
0.1
0.5
dB
f = 190 to 200 MHz
0.1
0.4
dB
s11
input return losses
f = 5 to 200 MHz
20
dB
s22
output return losses
f = 5 to 200 MHz
20
dB
s21
phase response
f = 5 MHz
45
45
dB
s12
reverse isolation
f = 5 to 200 MHz
42
dB
CTB
composite triple beat
6 chs at; Vo = 50 dBmV;
measured at 37 MHz; note 1
74
dB
10 chs at; Vo = 50 dBmV;
measured at 67.25 MHz; note 2
68
dB
28 chs at; Vo = 50 dBmV;
measured at 199.25 MHz; note 3
57
dB
Xmod
cross modulation
6 chs at; Vo = 50 dBmV;
measured at 37 MHz; note 1
66
dB
10 chs at; Vo = 50 dBmV;
measured at 25 MHz; note 2
57
dB
28 chs at; Vo = 50 dBmV;
measured at 25 MHz; note 3
50
dB
CSO
composite second order
distortion
6 chs at; Vo = 50 dBmV;
measured at 38 MHz; note 1
74
dB
10 chs at; Vo = 50 dBmV;
measured at 68.5 MHz; note 2
74
dB
28 chs at; Vo = 50 dBmV;
measured at 200.5 MHz; note 3
66
dB
Vo
output voltage
dim = 60 dB; note 4
62
dBmV
d2
second order distortion
note 5
70
dB
NF
noise gure
f = 70 MHz
5.3
dB
f = 200 MHz
5.5
dB
Itot
total current consumption
note 6
145
160
175
mA
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