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參數(shù)資料
| 型號： | 934056464118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 45 A BUF OR INV BASED PRPHL DRVR, PSSO4 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 197K |
| 代理商： | 934056464118 |
Philips Semiconductors
Product Specification
TOPFET high side switch
BUK215-50YT
SMD version
Fig.4. High side switch measurements schematic.
(current and voltage conventions)
Fig.5. Typical on-state resistance, t
p = 300
s.
R
ON = f(Tj); parameter VBG; condition IL = 10 A
Fig.6. Typical on-state characteristics, T
j = 25 C.
I
L = f(Tj); parameter VBG; tp = 250
s
Fig.7. Typical supply characteristics, 25 C.
I
G = f(VBG); parameter VIG
Fig.8. Typical on-state resistance,T
j = 25 C.
R
ON = f(VBG); condition IL = 10 A; tp = 300
s
Fig.9. Typical operating supply current.
I
G = f(Tj); parameters IL, VBG; condition VIG = 5 V
L
I
S
TOPFET
HSS
B
G
IB
IG
II
IS
IL
VBG
VIG
VSG
RS
VLG
LOAD
VBL
0
1
2
3
4
5
0
10203040506070
VBG / V
IBG(ON) / mA
OPERATING VIG = 5 V
CLAMPING
OVERVOLTAGE
SHUTDOWN
UNDERVOLTAGE
SHUTDOWN
QUIESCENT VIG = 0 V
BUK215-50YT
0
20
40
60
80
-50
0
50
100
150
200
Tj /
OC
RON / mOhm
VBG = 6 V
9 V =< VBG =< 35 V
typ .
BUK215-50YT
RON / mOhm
20
22
24
26
28
30
32
34
36
38
40
1
10
100
VBG / V
BUK215-50YT
RON max
0
10
20
30
40
50
012
VBL / V
IL / A
BUK215-50YT
5
6
7
VBG / V
> = 8
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
200
Tj /
OC
IG / mA
lL > IL(TO)
VBG = 50 V
9 V <= VBG <= 35 V
typ.
lL = 0 A
lL > IL(TO)
BUK215-50YT
June 2000
7
Rev 1.000
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