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參數(shù)資料
| 型號： | 934056464118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | 45 A BUF OR INV BASED PRPHL DRVR, PSSO4 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 197K |
| 代理商： | 934056464118 |
Philips Semiconductors
Product Specification
TOPFET high side switch
BUK215-50YT
SMD version
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
BG
Continuous supply voltage
0
50
V
I
L
Continuous load current
T
mb
≤ 95C
-
20
A
P
D
Total power dissipation
T
mb
≤ 25C
-
67
W
T
stg
Storage temperature
-55
175
C
T
j
Continuous junction temperature
1
-
150
C
T
sold
Mounting base temperature
during soldering
-
260
C
Reverse battery voltages
2
-V
BG
Continuous reverse voltage
-
16
V
-V
BG
Peak reverse voltage
-
32
V
Application information
R
I, RS
External resistors
3
to limit input, status currents
3.2
-
k
Input and status
I
I, IS
Continuous currents
-5
5
mA
I
I, IS
Repetitive peak currents
δ ≤ 0.1, tp = 300 s
-50
50
mA
Inductive load clamping
I
L = 10 A, VBG = 16 V
E
BL
Non-repetitive clamping energy
T
j
≤ 150C prior to turn-off
-
150
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
4
R
th j-mb
Junction to mounting base
-
1.52
1.86
K/W
1 For normal continuous operation. A higher T
j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
j
rating must be observed.
3 To limit currents during reverse battery and transient overvoltages (positive or negative).
4 Of the output power MOS transistor.
June 2000
2
Rev 1.000
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