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參數(shù)資料
| 型號： | 934056481118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 283K |
| 代理商： | 934056481118 |
Philips Semiconductors
BUK7226-75A
TrenchMOS standard level FET
Product specication
Rev. 01 — 09 October 2000
6 of 13
9397 750 07584
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V; Figure 15
0.85
1.2
V
trr
reverse recovery time
IS = 20 A; dIS/dt = 100 A/s; VGS = 10 V;
VDS =30V
53
ns
Qr
recovered charge
144
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
On-state resistance: typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nb06
0
20
40
60
80
100
120
140
160
180
200
02
46
8
10
VDS(V)
ID
(A)
4.5
5
6
7
8
VGS = 20(V)
10
9
03nb05
10
12
14
16
18
20
22
24
26
28
510
15
20
VGS(V)
RDSon
(mOhm)
03nb07
10
20
30
40
50
60
0
50
100
150
200
ID(A)
RDSon
(mOhm)
VGS= 5(V)
67
8
9
10
03nb25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-60
-20
20
60
100
140
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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