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參數(shù)資料
| 型號： | 934056481118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 75 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 283K |
| 代理商： | 934056481118 |
Philips Semiconductors
BUK7226-75A
TrenchMOS standard level FET
Product specication
Rev. 01 — 09 October 2000
5 of 13
9397 750 07584
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C75
V
Tj = 55 °C70
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
234V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS =55V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID =25A; Figure 7 and 8
Tj =25 °C
22.1
26
m
Tj = 175 °C
54.6
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 12
1789 2385 pF
Coss
output capacitance
382
458
pF
Crss
reverse transfer capacitance
219
300
pF
td(on)
turn-on delay time
VDD =30V; RL = 1.2 ;VGS =10V; RG =10
14
ns
tr
rise time
66
ns
td(off)
turn-off delay time
61
ns
tf
fall time
41
ns
Ld
internal drain inductance
measured from drain lead from package to
centre of die
2.5
nH
Ls
internal source inductance
measured from source lead from package to
source bond pad
7.5
nH
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