- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄24706 > 934056484118 (NXP SEMICONDUCTORS) 21 A, 100 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PDF資料下載
參數(shù)資料
| 型號(hào)： | 934056484118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 21 A, 100 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 282K |
| 代理商： | 934056484118 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
Philips Semiconductors
BUK7275-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 25 October 2000
5 of 13
9397 750 07645
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
234V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID =13A; Figure 7 and 8
Tj =25 °C
64
75
m
Tj = 175 °C
187
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 12
910
1210 pF
Coss
output capacitance
130
152
pF
Crss
reverse transfer capacitance
80
107
pF
td(on)
turn-on delay time
VDD =30V; RL = 2.2 ; VGS =10V;
RG = 5.6 ;
8
ns
tr
rise time
39
ns
td(off)
turn-off delay time
26
ns
tf
fall time
24
ns
Ld
internal drain inductance
measured from drain lead from package to
centre of die
2.5
nH
Ls
internal source inductance
measured from source lead from package to
source bond pad
7.5
nH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934056498112 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 934056499112 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 934056506215 | 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 934056508115 | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 934056511115 | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。