參數(shù)資料
型號: 934056506215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 850 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù): 1/13頁
文件大?。?/td> 276K
代理商: 934056506215
BSH114
N-channel enhancement mode eld effect transistor
Rev. 01 — 09 November 2000
Product specication
c
M3D088
1.
Description
N-channel enhancement mode eld-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
BSH114 in SOT23.
2.
Features
s TrenchMOS technology
s Low on-state resistance
s Very fast switching
s Surface mount package.
3.
Applications
s Relay driver
s DC to DC converter
s General purpose switch.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT23, simplied outline and symbol
Pin
Description
Simplied outline
Symbol
1
gate (g)
SOT23
2
source (s)
3
drain (d)
MSB003
Top view
12
3
s
d
g
MBB076
相關(guān)PDF資料
PDF描述
934056508115 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
934056511115 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
0603B102xxx Circular Connector; Body Material:Aluminum; Series:PT06; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:8-4
934056513135 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
934056513115 1000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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