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參數(shù)資料
| 型號(hào)： | 934056514135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-70, CMPAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | 934056514135 |
2001 Jul 13
3
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS4140U
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
in free air; note 2
357
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off
current
VCB = 40 V; IC =0
100
nA
VCB = 40 V; IC = 0; Tamb = 150 °C
50
A
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB =0
100
nA
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =5V; IC =1mA
300
VCE =5V; IC = 500 mA
300
900
VCE =5V; IC =1A
200
VCEsat
collector-emitter saturation
voltage
IC = 100 mA; IB =1mA
200
mV
IC = 500 mA; IB =50mA
250
mV
IC = 1 A; IB = 100 mA
500
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
260
<500
m
VBEsat
base-emitter saturation
voltage
IC = 1 A; IB = 100 mA
1.2
V
VBEon
base-emitter turn-on
voltage
VCE =5V; IC =1A
1.1
V
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
150
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
10
pF
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