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參數(shù)資料
| 型號： | 934056514135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 58K |
| 代理商： | 934056514135 |
2001 Jul 13
4
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS4140U
handbook, halfpage
0
1000
200
400
600
800
MLD660
101
1
(1)
10
IC (mA)
hFE
102
103
104
(3)
(2)
Fig.2
DC current gain as a function of collector
current; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
10
1
101
110
102
103
104
101
MLD656
IC (mA)
VBE
(V)
(1)
(3)
(2)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
1
MLD657
110
102
IC (mA)
VCEsat
(mV)
103
104
(3)
(2)
(1)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MLD658
10
1
102
101
110
IC (mA)
RCEsat
(
)
102
103
104
101
(3)
(1)
(2)
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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