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參數(shù)資料
| 型號(hào)： | 934056519135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 10/15頁(yè) |
| 文件大小： | 161K |
| 代理商： | 934056519135 |
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2003 Feb 10
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1820-70
handbook, halfpage
0
PL (PEP) (W)
15
10
5
0
20
40
80
60
MLD526
Gp
(dB)
ηD
(%)
Gp
ηD
60
20
40
0
Fig.2
Power gain and drain efficiency as a
function of peak envelope load power;
typical values.
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS =26V;
IDQ = 500 mA; Th ≤ 25 °C.
Fig.2
Power gain and drain efficiency as a
function of peak envelope load power;
typical values.
handbook, halfpage
020
PL (PEP) (W)
dim
(dBc)
40
80
0
20
60
80
40
60
MLD527
d3
d5
d7
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS =26V;
IDQ = 500 mA; Th ≤ 25 °C.
Fig.3
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
0
(1)
(2)
(3)
PL (W)
15
10
5
0
20
40
80
60
MLD528
Gp
(dB)
ηD
(%)
60
20
40
0
(3)
(1)
(2)
Fig.4
Power gain and drain efficiency as a
function of the peak envelope load power;
typical values.
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; Th ≤ 25 °C.
(1) IDQ = 400 mA.
(2) IDQ = 500 mA.
(3) IDQ = 600 mA.
handbook, halfpage
0
(1)
(2)
(3)
20
PL (PEP) (W)
d3
(dBc)
40
80
0
20
60
80
40
60
MLD529
Fig.5
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 400 mA.
(2) IDQ = 500 mA.
(3) IDQ = 600 mA.
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