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參數(shù)資料
| 型號： | 934056519135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 161K |
| 代理商： | 934056519135 |
2003 Feb 10
2
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1820-70
FEATURES
Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 500 mA:
– Output power = 65 W (PEP)
– Gain = 12 dB
– Efficiency = 32%
– dim =
26 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (1800 to 2000 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.
DESCRIPTION
70 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.
PINNING
PIN
DESCRIPTION
1
drain
2
gate
3
source, connected to ange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at Th =25 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
2-tone, class-AB
f1 = 2000; f2 = 2000.1
26
65 (PEP)
>11
>30
≤25
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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