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參數(shù)資料
| 型號： | 934056520135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 165K |
| 代理商： | 934056520135 |
2003 Feb 10
5
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1820-90
handbook, halfpage
15
0
40
120
5
80
PL (W)
Gp
(dB)
(1)
ηD
(%)
10
50
0
10
20
30
40
MLD558
(2)
(3)
Fig.4
Power gain and drain efficiency as functions
of average load power; typical values.
VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 600 mA.
(2) IDQ = 750 mA.
(3) IDQ = 900 mA.
handbook, halfpage
040
PL (PEP) (W)
d3
(dBc)
120
0
20
60
80
40
(1)
(2)
80
MLD559
(3)
Fig.5
Intermodulation distortion products as
functions of peak envelope load power;
typical values.
VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 600 mA.
(2) IDQ = 750 mA.
(3) IDQ = 900 mA.
handbook, halfpage
1.6
1.8
ri
xi
f (GHz)
Zi
(
)
2
2.2
6
4
0
2
MLD560
Fig.6
Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 750 mA; PL = 90 W; Th ≤ 25 °C.
handbook, halfpage
1.6
1.8
RL
XL
f (GHz)
ZL
(
)
2
2.2
4
2
4
0
MLD561
Fig.7
Load impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 750 mA; PL = 90 W; Th ≤ 25 °C.
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