參數(shù)資料
型號： 934056520135
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 9/15頁
文件大?。?/td> 165K
代理商： 934056520135
2003 Feb 10
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1820-90
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. The value of capacitance is that of the die only.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to heatsink Th =25 °C; note 1
0.81
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 2.1 mA
65
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 210 mA
4.4
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
15
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
27
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
38
nA
gfs
forward transconductance
VDS = 10 V; ID = 7.5 A
6.2
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID = 7.5 A
0.1
Crss
feedback capacitance
VGS =0; VDS = 26 V; f = 1 MHz;
note 1
5.1
pF
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PDF描述
934056521112 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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