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參數(shù)資料
| 型號： | 934056521112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 165K |
| 代理商： | 934056521112 |
2003 Feb 24
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2022-70
handbook, halfpage
Gp
(dB)
Gp
η
D
(%)
η
D
15
10
5
0
60
20
0
40
MGW530
040
20
60
80
100
PL (PEP) (W)
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
VDS = 28 V; IDQ = 500 mA; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
handbook, halfpage
dim
(dBc)
d3
d5
d7
040
20
60
80
100
PL (PEP) (W)
0
20
60
80
40
MGW531
VDS = 28 V; IDQ = 500 mA; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.3
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
Gp
(dB)
η
D
(%)
15
10
5
0
60
20
0
40
MGW532
040
20
60
80
100
PL (PEP) (W)
(1)
(3)
(2)
(4)
(6)
(5)
Fig.4
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
VDS = 28 V; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
(1) IDQ = 600 mA.
(2) IDQ = 500 mA.
(3) IDQ = 400 mA.
(4) IDQ = 400 mA.
(5) IDQ = 500 mA.
(6) IDQ = 600 mA.
handbook, halfpage
d3
(dBc)
040
20
60
80
100
PL (PEP) (W)
0
20
60
80
40
MGW533
(1)
(2)
(3)
VDS = 28 V; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.5
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
(1) IDQ = 400 mA.
(2) IDQ = 500 mA.
(3) IDQ = 600 mA.
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