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參數(shù)資料
| 型號： | 934056521112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 165K |
| 代理商： | 934056521112 |
2003 Feb 24
5
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2022-70
handbook, halfpage
Gp
(dB)
Gp
η
D
(%)
η
D
15
10
5
0
30
10
0
20
MGW534
30
34
32
36
38
40
PL(AV) (dBm)
Fig.6
Power gain and drain efficiency as functions
of average load power; typical values.
VDS = 28 V; IDQ = 450 mA; Th ≤ 25 °C;
f1 = 2135 MHz; f2 = 2145 MHz.
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
handbook, halfpage
dim
(dBc)
ACLR
(dBc)
30
34
32
36
38
40
0
20
60
40
0
20
60
40
MGW535
ACLR
dim
PL(AV) (dBm)
Fig.7
Intermodulation distortion and adjacent
channel power ratio as functions of average
load power; typical values.
VDS = 28 V; IDQ = 450 mA; Th ≤ 25 °C;
f1 = 2135 MHz; f2 = 2145 MHz.
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
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