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參數(shù)資料
| 型號： | 934056526135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 142K |
| 代理商： | 934056526135 |
2003 Jan 20
5
Philips Semiconductors
Product specication
50 V low VCEsat NPN transistor
PBSS4350Z
handbook, halfpage
0
hFE
IC (mA)
600
100
200
300
500
400
MGW175
101
110
102
103
104
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
VCE =2V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
0.2
IC (mA)
VBE
(V)
1.2
0.4
0.8
0.6
1.0
MGW176
101
110
102
103
104
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector-current; typical values.
VCE =2V.
(1) Tamb = 55 °C.
(2) Tamb =25C.
(3) Tamb = 150 °C.
handbook, halfpage
IC (mA)
103
102
10
1
MGW181
101
110
102
103
104
VCEsat
(mV)
(1)
(2)
(3)
Fig.4
Collector-emitter saturation as a function of
collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
IC (mA)
1.2
0.6
0.4
0.2
0
0.8
1.0
MGW178
101
110
102
103
104
VBEsat
(V)
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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