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參數(shù)資料
| 型號(hào)： | 934056526135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 12/15頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | 934056526135 |
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2003 Jan 20
6
Philips Semiconductors
Product specication
50 V low VCEsat NPN transistor
PBSS4350Z
handbook, halfpage
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
2
1200
1000
0
200
400
600
800
0.4
0.8
1.2
1.6
MGW179
VCE (V)
IC
(mA)
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = 3.96 nA.
(2) IB = 3.63 nA.
(3) IB = 3.30 nA.
(4) IB = 2.97 mA.
(5) IB = 2.64 nA.
(6) IB = 2.31 nA.
(7) IB = 1.98 nA.
(8) IB = 1.65 nA.
(9) IB = 1.32 nA.
(10) IB = 0.99 nA.
(11) IB = 0.66 nA.
(12) IB = 0.33 nA.
VCE =5V.
handbook, halfpage
0
(4)
(3)
(2)
(5)
(6)
(7)
(8)
(9)
(10)
2
5
0
1
2
3
4
0.4
0.8
1.2
1.6
MGW180
VCE (V)
IC
(A)
(1)
Fig.7
Collector current as a function of
collector-emitter voltage; typical values.
VCE =5V.
(1) IB = 150 mA.
(2) IB = 135 mA.
(3) IB = 120 mA.
(4) IB = 105 mA.
(5) IB =90mA.
(6) IB =75mA.
(7) IB =60mA.
(8) IB =45mA.
(9) IB =30mA.
(10) IB =15mA.
handbook, halfpage
IC (mA)
103
102
101
102
10
1
MGW182
101
110
102
103
104
RCEsat
(
)
(1)
(2)
(3)
Fig.8
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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