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參數(shù)資料
| 型號： | 934056575115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 7 A, 100 V, 0.084 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 286K |
| 代理商： | 934056575115 |
Philips Semiconductors
BUK9875-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 30 January 2001
6 of 13
9397 750 07735
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 5 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
63
ns
Qr
recovered charge
220
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =8A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03na76
0
10
20
30
40
50
60
70
02
46
8
10
VDS (V)
ID
(A)
2.8
3.0
5.0
VGS (V)= 10
3.2
2.2
3.6
3.8
2.4
2.6
4.0
3.4
03na74
50
55
60
65
70
75
3456
789
10
VGS (V)
RDSon
(m
)
03na77
40
60
80
100
120
140
160
0
10203040
ID (A)
RDSon
3.0
3.2
3.4
3.6
3.8
4.0
5.0
(m
)
VGS (V) =
03nc25
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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