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參數(shù)資料
| 型號(hào)： | 934056575115 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 7 A, 100 V, 0.084 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 9/13頁(yè) |
| 文件大?。?/td> | 286K |
| 代理商： | 934056575115 |
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Philips Semiconductors
BUK9875-100A
TrenchMOS logic level FET
Product specication
Rev. 01 — 30 January 2001
5 of 13
9397 750 07735
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 150 °C
0.6
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 150 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =8A;
Tj =25 °C
64
75
m
Tj = 150 °C
162
m
VGS = 4.5 V; ID =8A
84
m
VGS =10V; ID =8A
62
72
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
1270
1690
pF
Coss
output capacitance
140
167
pF
Crss
reverse transfer capacitance
90
124
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
13
ns
tr
rise time
120
ns
td(off)
turn-off delay time
58
ns
tf
fall time
57
ns
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