參數(shù)資料
型號: 934056595118
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 6300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁數(shù): 10/13頁
文件大?。?/td> 260K
代理商: 934056595118
Philips Semiconductors
PSMN038-100K
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 16 January 2001
6 of 13
9397 750 07897
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ad98
0
10
20
30
40
50
01
23
45
VDS (V)
ID
(A)
5 V
4.5 V
7 V
6 V
VGS = 10 V
03ae00
0
10
20
30
40
50
02
46
8
VGS (V)
ID
(A)
VDS > ID X RDSon
Tj = 150 C
25 C
03ad99
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
1020
3040
50
ID (A)
RDSon
(
)
Tj = 25 C
VGS = 6 V
7 V
10 V
4.5 V
5 V
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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