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參數(shù)資料
| 型號(hào)： | 934056595118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 6300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 260K |
| 代理商： | 934056595118 |
Philips Semiconductors
PSMN038-100K
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 16 January 2001
5 of 13
9397 750 07897
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 A; VGS = 0 V
100
130
V
VGS(th)
gate-source threshold voltage
Tj =25 °C2
4
V
Tj = 150 °C
1.2
V
Tj = 55 °C
6V
IDSS
drain-source leakage current
VDS =80V; VGS =0V; Tj =25 °C
1
A
VDS = 100 V; VGS =0V; Tj = 150 °C
0.5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
33
38
m
Tj = 150 °C
76
88
m
Dynamic characteristics
gfs
forward transconductance
20
S
Qg(tot)
total gate charge
43
nC
Qgs
gate-source charge
6.5
nC
Qgd
gate-drain (Miller) charge
16
21.5
nC
Ciss
input capacitance
1740
pF
Coss
output capacitance
220
pF
Crss
reverse transfer capacitance
135
pF
td(on)
turn-on delay time
VDD =50V; ID = 1 A; VGS =10V;RG =6
15
30
ns
tr
rise time
13
25
ns
td(off)
turn-off delay time
50
80
ns
tf
fall time
25
40
ns
Source-drain (reverse) diode
VSD
0.7
1.1
V
trr
reverse recovery time
IS = 6.3 A; dIS/dt = 100 A/s; VGS =0V
85
ns
Qr
recovery charge
0.3
C
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