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參數(shù)資料
| 型號： | 934056596118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.1 A, 150 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 255K |
| 代理商： | 934056596118 |
Philips Semiconductors
PSMN085-150K
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 16 January 2001
6 of 13
9397 750 07898
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ae16
0
10
20
30
01
23
45
VDS (V)
(A)
4 V
3.5 V
5 V
4.5 V
VGS = 10 V
03ae18
0
10
20
30
01
23
45
VGS (V)
ID
(A)
VDS > ID X RDSon
Tj = 150 C
25 C
03ae17
0.05
0.1
0.15
0.2
0.25
010
20
30
ID (A)
RDSon
(
)
Tj = 25 C
VGS = 4.5 V
5 V
10 V
3.5 V
4 V
03aa30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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