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參數(shù)資料
| 型號： | 934056596118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4.1 A, 150 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 255K |
| 代理商： | 934056596118 |
Philips Semiconductors
PSMN085-150K
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 16 January 2001
8 of 13
9397 750 07898
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °C and 150 °C; VGS =0V
ID = 4.1 A; VDD = 30 V, 75 V and 120 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ae20
0
10
20
30
0
0.4
0.8
1.2
VSD (V)
IS
(A)
Tj = 25 C
150 C
VGS = 0 V
03ae22
0
2
4
6
8
10
015
30
45
QG (nC)
VGS
(V)
ID = 4.1 A
Tj = 25 C
120 V
VDD = 30 V 75 V
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