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參數(shù)資料
| 型號(hào)： | 934056600115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-89, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 934056600115 |
2001 Oct 31
3
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS2540F
THERMAL CHARACTERISTICS
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
100
nA
VCB = 30 V; IE = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =2V; IC =10mA
200
VCE =2V; IC = 100 mA; note 1
100
VCE =2V; IC = 500 mA; note 1
50
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
50
mV
IC = 100 mA; IB =5mA
100
mV
IC = 200 mA; IB =10mA
200
mV
IC = 500 mA; IB = 50 mA; note 1
250
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
380
<500
m
VBEsat
base-emitter saturation voltage
IC = 500 mA; IB = 50 mA; note 1
1.2
V
VBEon
base-emitter turn-on voltage
VCE =2V; IC = 100 mA; note 1
1.1
V
fT
transition frequency
IC = 100 mA; VCE = 5 V; f = 100 MHz 250
450
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
6pF
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