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參數(shù)資料
| 型號： | 934056600115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, SC-89, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 934056600115 |
2001 Oct 31
4
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS2540F
handbook, halfpage
0
400
800
1200
200
600
1000
MHC082
101
1
hFE
10
IC (mA)
102
103
(1)
(2)
(3)
Fig.2
DC current gain as a function of collector
current; typical values.
VCE =2V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MHC085
101
110
VBE
(mV)
IC (mA)
102
103
(1)
(2)
(3)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
VCE =2V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
MHC086
101
110
VCEsat
(mV)
IC (mA)
102
103
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MHC084
101
110
VBEsat
(mV)
IC (mA)
102
103
(1)
(2)
(3)
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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