參數(shù)資料
型號(hào): 934056604215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC, SST3, SMD, 3 PIN
文件頁(yè)數(shù): 6/12頁(yè)
文件大?。?/td> 75K
代理商: 934056604215
2002 Aug 08
3
Philips Semiconductors
Product specication
50 V low VCEsat NPN transistor
PBSS4350T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ≤ 0.25.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
2A
ICRP
repetitive peak collector current
note 1
3A
ICM
peak collector current
single peak
5A
IB
base current (DC)
0.5
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
300
mW
Tamb ≤ 25 °C; note 3
480
mW
Tamb ≤ 25 °C; note 4
540
mW
Tamb ≤ 25 °C; notes 1 and 2
1.2
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
417
K/W
in free air; note 2
260
K/W
in free air; note 3
230
K/W
in free air; notes 1 and 4
104
K/W
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