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參數(shù)資料
| 型號(hào)： | 934056604215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 75K |
| 代理商： | 934056604215 |
2002 Aug 08
4
Philips Semiconductors
Product specication
50 V low VCEsat NPN transistor
PBSS4350T
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current VCB = 50 V; IE =0
100
nA
VCB = 50 V; IE = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =2V; IC = 100 mA
300
VCE =2V; IC = 500 mA
300
VCE =2V; IC = 1 A; note 1
300
VCE =2V; IC = 2 A; note 1
200
VCE =2V; IC = 3 A; note 1
100
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB =50mA
80
mV
IC = 1 A; IB =50mA
160
mV
IC = 2 A; IB = 100 mA; note 1
280
mV
IC = 2 A; IB = 200 mA; note 1
260
mV
IC = 3 A; IB = 300 mA; note 1
370
mV
RCEsat
equivalent on-resistance
IC = 2 A; IB = 200 mA; note 1
100
130
m
VBEsat
base-emitter saturation
voltage
IC = 2 A; IB = 100 mA; note 1
1.1
V
IC = 3 A; IB = 300 mA; note 1
1.2
V
VBEon
base-emitter turn-on voltage
VCE =2V; IC = 1 A; note 1
1.2
V
fT
transition frequency
IC = 100 mA; VCE =5V;
f = 100 MHz
100
MHz
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1 MHz
25
pF
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